Effects of Back Contact Instability on Cu2ZnSnS4 Devices and Processes-Reference-Cited by-同舟云学术

Effects of Back Contact Instability on Cu2ZnSnS4 Devices and Processes

Published:2013-07-15 Issue:15 Volume:25 Page:3162-3171
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Scragg Jonathan J.¹,Kubart Tomas¹,Wätjen J. Timo¹,Ericson Tove¹,Linnarsson Margareta K.²,Platzer-Björkman Charlotte¹

Affiliation:

1. Ångström Solar Center, Solid State Electronics, Uppsala University, Box 534, SE-751 21 Uppsala, Sweden

2. School of Information and Communication Technology, Integrated Devices and Circuits, KTH Royal Institute of Technology, Electrum 229, SE-164 40 Kista, Sweden

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm4015223

Reference26 articles.

1. Beyond 11% Efficiency: Characteristics of State-of-the-Art Cu2ZnSn(S,Se)4Solar Cells

2. Progress in Thin Film Solar Cells Based onCu2ZnSnS4

3. Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4absorber

4. Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier

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