Temperature Dependence of Excitonic Auger Recombination in Excitonic-Complex-Free Monolayer WS<sub>2</sub> by Considering Auger Broadening and Generation Efficiency-Reference-Cited by-同舟云学术

Temperature Dependence of Excitonic Auger Recombination in Excitonic-Complex-Free Monolayer WS₂ by Considering Auger Broadening and Generation Efficiency

Published:2023-05-01 Issue:18 Volume:14 Page:4259-4265
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Kim Donggyu¹^ORCID,Tran Trang Thu²^ORCID,Taniguchi Takashi³^ORCID,Watanabe Kenji⁴^ORCID,Kim Jeongyong²^ORCID,Jang Joon I.¹^ORCID

Affiliation:

1. Department of Physics, Sogang University, Seoul 04107, South Korea

2. Department of Energy Science, Sungkyunkwan University, Suwon 16419, South Korea

3. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan

4. Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan

Funder

Samsung Science and Technology Foundation

National Research Foundation of Korea

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.3c00305

Reference32 articles.

1. Emerging Photoluminescence in Monolayer MoS2

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Mono- and Bilayer WS2 Light-Emitting Transistors

4. Large-area and bright pulsed electroluminescence in monolayer semiconductors

5. WS2 monolayer-based light-emitting devices in a vertical p–n architecture

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