Excitation Intensity-Dependent Quantum Yield of Semiconductor Nanocrystals

Author:

Ghosh Subhabrata1ORCID,Ross Ulrich2,Chizhik Anna M.1,Kuo Yung3ORCID,Jeong Byeong Guk4ORCID,Bae Wan Ki5ORCID,Park Kyoungwon6,Li Jack3,Oron Dan7ORCID,Weiss Shimon38910ORCID,Enderlein Jörg111ORCID,Chizhik Alexey I.1ORCID

Affiliation:

1. Third Institute of Physics − Biophysics, Georg August University Göttingen, Friedrich-Hund Platz 1, 37077 Göttingen, Germany

2. IV. Physical Institute - Solids and Nanostructures, Georg August University Göttingen, Friedrich-Hund Platz 1, 37077 Göttingen, Germany

3. Department of Chemistry and Biochemistry, University of California Los Angeles, Los Angeles, California 90095, United States

4. School of Chemical and Biomolecular Engineering, Pusan National University, Busan 46241, Republic of Korea

5. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea

6. Korea Electronics Technology Institute, Seongnam-si, Gyeonggi-do 13509, Republic of Korea

7. Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 76100, Israel

8. California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, United States

9. Department of Physiology, University of California Los Angeles, Los Angeles, California 90095, United States

10. Department of Physics, Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan, 52900, Israel

11. Cluster of Excellence “Multiscale Bioimaging: from Molecular Machines to Networks of Excitable Cells,” (MBExC), Georg August University of Göttingen, Robert-Koch-Str. 40, 37075 Göttingen, Germany

Funder

Defense Advanced Research Projects Agency

Deutsche Forschungsgemeinschaft

Office of Science

Human Frontier Science Program

H2020 European Research Council

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

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