Origin of Two-Dimensional Vertical Ferroelectricity in WTe2 Bilayer and Multilayer-Reference-Cited by-同舟云学术

Origin of Two-Dimensional Vertical Ferroelectricity in WTe2 Bilayer and Multilayer

Published:2018-12-12 Issue:24 Volume:9 Page:7160-7164
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Yang Qing¹,Wu Menghao¹^ORCID,Li Ju²^ORCID

Affiliation:

1. School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China

2. Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.8b03654

Reference39 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Single-layer MoS2 transistors

3. Black phosphorus field-effect transistors

4. Two-dimensional monolayer designs for spintronics applications

5. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit

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