Ab Initio Study of the Dielectric and Electronic Properties of Multilayer GaS Films-Reference-Cited by-同舟云学术

Ab Initio Study of the Dielectric and Electronic Properties of Multilayer GaS Films

Published:2015-03-11 Issue:6 Volume:6 Page:1059-1064
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Li Yan¹,Chen Hui¹,Huang Le¹,Li Jingbo¹

Affiliation:

1. State Key Laboratory of Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, No. A 35, Qinghua East Road, Haidian District, Beijing 100083, China

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.5b00139

Reference37 articles.

1. Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates

2. GaS and GaSe Ultrathin Layer Transistors

3. Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates

4. High performance few-layer GaS photodetector and its unique photo-response in different gas environments

5. Single-Layer Group-III Monochalcogenide Photocatalysts for Water Splitting

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