Metal-to-Insulator Transition in Au Chains on Si(111)-5×2-Au by Band Filling: Infrared Plasmonic Signal and Ab Initio Band Structure Calculation-Reference-Cited by-同舟云学术

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Metal-to-Insulator Transition in Au Chains on Si(111)-5×2-Au by Band Filling: Infrared Plasmonic Signal and Ab Initio Band Structure Calculation

Published:2015-09-03 Issue:18 Volume:6 Page:3615-3620
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Hötzel Fabian¹,Seino Kaori²,Chandola Sandhya³,Speiser Eugen³,Esser Norbert³,Bechstedt Friedhelm²,Pucci Annemarie¹

Affiliation:

1. Kirchhoff Institute for Physics, Heidelberg University, Im Neuenheimer Feld 227, 69120 Heidelberg, Germany

2. Institute of Condensed Matter Theory and Solid State Optics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena, Germany

3. Leibniz-Institut für Analytische Wissenschaften — ISAS - e.V., Department Berlin, Schwarzschildstraße 8, 12489 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.5b01530

Reference32 articles.

1. Coverage-dependent faceting of Au chains on Si(557)

2. Electronic Effects in the Length Distribution of Atom Chains

3. Ag-induced zero- and one-dimensional nanostructures on vicinal Si(111)

4. The excitation of one-dimensional plasmons in Si and Au–Si complex atom wires

5. Electronic structure of Ag-induced atomic wires on Si(557) investigated by STS and angle-resolved photoemission

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1. Alteration of the inter-chain distance between Au atomic wires on Si(111) induced by Tl adsorption;Surface Science;2024-02

2. Structural and electronic effects of adsorbed Bi on the metallic atomic chains in Au/Si(111)5 × 2;Applied Surface Science;2021-08

3. View on Si(111)−(5×2)−Au with plasmon spectroscopy;Physical Review B;2020-08-24

4. Au-induced reconstructions of the Si(111) surface with ordered and disordered domain walls;Physical Review B;2020-02-04

5. Ab Initio Simulations of Semiconductor Surfaces and Interfaces;Springer Handbook of Surface Science;2020

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