Accurate Ab Initio Quantum Mechanics Simulations of Bi2Se3 and Bi2Te3 Topological Insulator Surfaces
Author:
Affiliation:
1. Materials and Process Simulation Center, MC139-74, California Institute of Technology, Pasadena, California 91125, United States
Funder
Division of Chemistry
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
General Materials Science,Physical and Theoretical Chemistry
Link
http://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.5b01586
Reference34 articles.
1. Colloquium: Topological insulators
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3. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3
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5. Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies
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