Electron Transport in Graphene Nanoribbon Field-Effect Transistor under Bias and Gate Voltages: Isochemical Potential Approach
Author:
Affiliation:
1. Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
2. Department of Chemistry, Pohang University of Science and Technology, Pohang 37673, Korea
Funder
National Research Foundation of Korea
Korea Institute of Science and Technology Information
Publisher
American Chemical Society (ACS)
Subject
General Materials Science,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.6b00996
Reference30 articles.
1. Electric Field Effect in Atomically Thin Carbon Films
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5. Energy Band-Gap Engineering of Graphene Nanoribbons
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