Charge Trapping and Defect Dynamics as Origin of Memory Effects in Metal Halide Perovskite Memlumors-Reference-Cited by-同舟云学术

Charge Trapping and Defect Dynamics as Origin of Memory Effects in Metal Halide Perovskite Memlumors

Published:2024-06-06 Issue:24 Volume:15 Page:6256-6265
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Marunchenko Alexandr¹²^ORCID,Kumar Jitendra¹,Kiligaridis Alexander¹,Rao Shraddha M.¹,Tatarinov Dmitry²,Matchenya Ivan²,Sapozhnikova Elizaveta²,Ji Ran³⁴,Telschow Oscar³⁴,Brunner Julius³⁴,Yulin Alexei²,Pushkarev Anatoly²^ORCID,Vaynzof Yana³⁴^ORCID,Scheblykin Ivan G.¹^ORCID

Affiliation:

1. Chemical Physics and NanoLund, Lund University, P.O. Box 124, 22100 Lund, Sweden

2. School of Physics and Engineering, ITMO University, 49 Kronverksky, St. Petersburg 197101, Russian Federation

3. Chair for Emerging Electronic Technologies, Technical University of Dresden, Nöthnitzer Straße 61, 01187 Dresden, Germany

4. Leibniz-Institute for Solid State and Materials Research Dresden, Helmholtzstraße 20, 01069 Dresden, Germany

Funder

Vetenskapsrådet

NanoLund, Lunds Universitet

Deutsche Forschungsgemeinschaft

Crafoordska Stiftelsen

Wenner-Gren Foundation

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.4c00985

Reference57 articles.

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