Group III (In/Ga)–V (P/As)–VI (S/Se) Monolayers: A New Class of Auxetic Semiconductors with Highly Anisotropic Electronic/Optical/Mechanical/Thermal Properties-Reference-Cited by-同舟云学术

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Group III (In/Ga)–V (P/As)–VI (S/Se) Monolayers: A New Class of Auxetic Semiconductors with Highly Anisotropic Electronic/Optical/Mechanical/Thermal Properties

Published:2024-03-11 Issue:11 Volume:15 Page:3043-3054
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Li Pengfei¹,Li Daqing²,Xu Yuehua²,Liang Changhao¹^ORCID,Zeng Xiao Cheng³^ORCID

Affiliation:

1. Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

2. School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China

3. Department of Materials Science & Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong

Funder

National Natural Science Foundation of China

Anhui Provincial Key Research and Development Plan

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.4c00156

Reference47 articles.

1. Black phosphorus field-effect transistors

2. Nonlocal Response and Anamorphosis: The Case of Few-Layer Black Phosphorus

3. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

4. Highly anisotropic and robust excitons in monolayer black phosphorus

5. High-Quality Black Phosphorus Atomic Layers by Liquid-Phase Exfoliation

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