Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors-Reference-Cited by-同舟云学术

Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors

Author:

S. Barbosa Martin¹²^ORCID,Balke Nina³^ORCID,Tsai Wan-Yu³,Santato Clara²^ORCID,Orlandi Marcelo O.¹^ORCID

Affiliation:

1. Departamento de Físico-Química, Universidade Estadual Paulista, Rua Professor Degni, 55, Araraquara, SP 14800-060, Brazil

2. Département de Génie physique, Polytechnique Montréal, C.P. 6079, Succ. Centre-ville, Montréal, QC H3C 3A7, Canada

3. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

Funder

Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada

Funda??o de Amparo ? Pesquisa do Estado de S?o Paulo

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

Reference40 articles.

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