Extremely Reduced Dielectric Constant and Band Gap Enhancement in Few-Layered Tungsten Disulfide Nanosheets
Author:
Affiliation:
1. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad201002, India
2. CSIR-Advanced Materials and Processes Research Institute, Bhopal, Madhya Pradesh462026, India
Funder
Council of Scientific and Industrial Research, India
Publisher
American Chemical Society (ACS)
Subject
General Materials Science,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.2c02558
Reference50 articles.
1. Large Surface Photovoltage of WS2/MoS2 and MoS2/WS2 Vertical Hetero-bilayers
2. Synthesis of WS2 nanosheets by a novel mechanical activation method
3. Few-layer transition metal dichalcogenides (MoS2, WS2, and WSe2) for water splitting and degradation of organic pollutants: Understanding the piezocatalytic effect
4. Two-Dimensional High-Quality Monolayered Triangular WS2 Flakes for Field-Effect Transistors
5. Layer number dependent optical and electrical properties of CVD grown two-dimensional anisotropic WS2
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