High-Temperature Excitonic Bose–Einstein Condensate in Centrosymmetric Two-Dimensional Semiconductors-Reference-Cited by-同舟云学术

High-Temperature Excitonic Bose–Einstein Condensate in Centrosymmetric Two-Dimensional Semiconductors

Published:2021-06-04 Issue:23 Volume:12 Page:5479-5485
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Wang Dan¹,Luo Nannan¹²,Duan Wenhui³^ORCID,Zou Xiaolong¹^ORCID

Affiliation:

1. Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China

2. Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China

3. Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China

Funder

Guangdong Innovative and Entrepreneurial Research Team Program

the China Postdoctoral Science Foundation

the Ministry of Science and Technology of China

the National Natural Science Foundation of China

the Beijing Advanced Innovation Center for Future Chip

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.1c01370

Reference50 articles.

1. Signatures of exciton condensation in a transition metal dichalcogenide

2. Spontaneous Bose Coherence of Excitons and Polaritons

3. Scaling Universality between Band Gap and Exciton Binding Energy of Two-Dimensional Semiconductors

4. Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination

5. Simple Screened Hydrogen Model of Excitons in Two-Dimensional Materials

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