Normal-Incidence-Excited Strong Coupling between Excitons and Symmetry-Protected Quasi-Bound States in the Continuum in Silicon Nitride–WS2 Heterostructures at Room Temperature-Reference-Cited by-同舟云学术

Normal-Incidence-Excited Strong Coupling between Excitons and Symmetry-Protected Quasi-Bound States in the Continuum in Silicon Nitride–WS2 Heterostructures at Room Temperature

Published:2020-05-28 Issue:12 Volume:11 Page:4631-4638
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Cao Shun¹^ORCID,Dong Hongguang¹²,He Jinlong³,Forsberg Erik¹,Jin Yi¹,He Sailing¹²^ORCID

Affiliation:

1. Centre for Optical and Electromagnetic Research, National Engineering Research Center for Optical Instruments, Zhejiang University, Hangzhou 310058, China

2. Ningbo Research Institute, Zhejiang University, Ningbo 315100, China

3. College of Modern Science and Technology, China Jiliang University, Hangzhou, 310018, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.0c01080