Tensile Strain-Dependent Ultrafast Electron Transfer and Relaxation Dynamics in Flexible WSe<sub>2</sub>/MoS<sub>2</sub> Heterostructures-Reference-Cited by-同舟云学术

Tensile Strain-Dependent Ultrafast Electron Transfer and Relaxation Dynamics in Flexible WSe₂/MoS₂ Heterostructures

Published:2023-11-30 Issue:49 Volume:14 Page:10920-10929
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Guo Sen¹²,Li Chaofan¹,Nie Zhaogang¹²^ORCID,Wang Xiaoli³,Wang Minghong¹,Tian Cunwei¹,Yan Xinhua⁴,Hu Kaige²,Long Run³^ORCID

Affiliation:

1. School of Physical Science and Information Technology, Liaocheng University, Liaocheng, Shandong 252000, China

2. FSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China

3. College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of the Ministry of Education, Beijing Normal University, Beijing 100875, China

4. Nobat Intelligent Equipment (Shandong), Company, Ltd., Liaocheng, Shandong 252000, China

Funder

Liaocheng University

Natural Science Foundation of Guangdong Province

National Natural Science Foundation of China

Key Technology Research and Development Program of Shandong Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.3c02943

Reference80 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. 2D transition metal dichalcogenides

3. Effects of strain on band structure and effective masses in MoS2

4. Local Strain Engineering in Atomically Thin MoS2

5. Bandgap Engineering of Strained Monolayer and Bilayer MoS2

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