Invalidity of Band-Gap Engineering Concept for Bi3+ Heterovalent Doping in CsPbBr3 Halide Perovskite-Reference-Cited by-同舟云学术

Invalidity of Band-Gap Engineering Concept for Bi3+ Heterovalent Doping in CsPbBr3 Halide Perovskite

Published:2018-09-06 Issue:18 Volume:9 Page:5408-5411
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Lozhkina Olga A.¹,Murashkina Anna A.¹,Shilovskikh Vladimir V.¹,Kapitonov Yury V.¹,Ryabchuk Vladimir K.¹,Emeline Alexei V.¹^ORCID,Miyasaka Tsutomu²^ORCID

Affiliation:

1. Saint-Petersburg State University, ul. Ulyanovskaya 1, Saint-Petersburg 198504, Russia

2. Toin University of Yokohama and Peccell Technologies, Inc., 1614 Kurogane-cho, Aoba, Yokohama, Kanagawa 225-8502, Japan

Funder

Russian Foundation for Basic Research

Ministry of Education and Science of the Russian Federation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.8b02178

Reference24 articles.

1. Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

2. High Performance Metal Halide Perovskite Light-Emitting Diode: From Material Design to Device Optimization

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4. Non-dissipative internal optical filtering with solution-grown perovskite single crystals for full-colour imaging

5. Solution-Grown CsPbBr3 Perovskite Single Crystals for Photon Detection

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