Valley-Contrasting Physics in Single-Layer CrSi2N4 and CrSi2P4
Author:
Affiliation:
1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan 250100, China
Funder
Shandong Province
Shandong University
National Natural Science Foundation of China
Natural Science Foundation of Shandong Province
Publisher
American Chemical Society (ACS)
Subject
General Materials Science,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.1c02069
Reference42 articles.
1. The electronic properties of graphene
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5. Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport
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