Photoisomerization-Induced Manipulation of Single-Electron Tunneling for Novel Si-Based Optical Memory-Reference-Cited by-同舟云学术

Photoisomerization-Induced Manipulation of Single-Electron Tunneling for Novel Si-Based Optical Memory

Published:2013-10-23 Issue:21 Volume:5 Page:11371-11376
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hayakawa Ryoma¹,Higashiguchi Kenji²³,Matsuda Kenji²,Chikyow Toyohiro¹,Wakayama Yutaka¹⁴

Affiliation:

1. International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

2. Department of Synthetic Chemistry and Biological Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan

3. PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan

4. Department of Chemistry and Biochemistry Faculty of Engineering, Kyushu University, 1-1 Namiki, Tsukuba 305-0044, Japan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am403616m

Reference32 articles.

1. Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device

2. Coulomb blockade and the Kondo effect in single-atom transistors

3. Electronically Configurable Molecular-Based Logic Gates

4. Observation of molecular orbital gating

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