ZnO/NiO Diode-Based Charge-Trapping Layer for Flash Memory Featuring Low-Voltage Operation
Author:
Affiliation:
1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
Funder
National Science Council Taiwan
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am507535c
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1. Covalent Assembly of Gold Nanoparticles for Nonvolatile Memory Applications
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5. A Program-Erasable High-$\kappa$$\hbox{Hf}_{0.3}{\hbox{N}}_{0.2}{\hbox{O}}_{0.5}$ MIS Capacitor With Good Retention
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