Fabrication and Evaluation of Solution-Processed Reduced Graphene Oxide Electrodes for p- and n-Channel Bottom-Contact Organic Thin-Film Transistors-Reference-Cited by-同舟云学术

Fabrication and Evaluation of Solution-Processed Reduced Graphene Oxide Electrodes for p- and n-Channel Bottom-Contact Organic Thin-Film Transistors

Published:2010-10-14 Issue:11 Volume:4 Page:6343-6352
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Becerril Héctor A.¹²,Stoltenberg Randall M.¹,Tang Ming Lee¹,Roberts Mark E.¹,Liu Zunfeng³,Chen Yongsheng³,Kim Do Hwan⁴,Lee Bang-Lin⁴,Lee Sangyoon⁴,Bao Zhenan¹

Affiliation:

1. Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States

2. Department of Chemistry, Brigham Young University-Idaho, Rexburg, Idaho 83440, United States

3. Key Laboratory for Functional Polymer Materials and Center for Nanoscale Science and Technology, College of Chemistry, Institute of Polymer Chemistry, Nankai University, Tianjin 300071, People’s Republic of China

4. Display Laboratory, Materials and Device Institute, Samsung Advanced Institute of Technology, Samsung Electronics CO., LTD., Yongin, 446-712, Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn101369j

Reference56 articles.

1. Organic thin film transistors: From theory to real devices

2. Organic Thin Film Transistors for Large Area Electronics

3. Introduction: Organic Electronics and Optoelectronics

4. Materials Challenges and Applications of Solution-Processed Organic Field-Effect Transistors

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