Tunable Band Gaps in Bilayer Graphene−BN Heterostructures-Reference-Cited by-同舟云学术

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Tunable Band Gaps in Bilayer Graphene−BN Heterostructures

Published:2011-01-28 Issue:3 Volume:11 Page:1070-1075
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ramasubramaniam Ashwin¹,Naveh Doron²,Towe Elias²

Affiliation:

1. Department of Mechanical and Industrial Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States

2. Department of Electical and Computer Engineering, Carnegie Mellon University, Pittsburgh Pennsylvania 15213, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl1039499

Reference25 articles.

1. Electron scattering on microscopic corrugations in graphene

2. Intrinsic and extrinsic performance limits of graphene devices on SiO2

3. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

4. Origin of spatial charge inhomogeneity in graphene

5. Substrate-limited electron dynamics in graphene

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