Development of Phosphorus-Doped Nanoscale Poly-Si Passivating Contacts via Inkjet Printing for Application in Silicon Solar Cells-Reference-Cited by-同舟云学术

Development of Phosphorus-Doped Nanoscale Poly-Si Passivating Contacts via Inkjet Printing for Application in Silicon Solar Cells

Published:2022-12-07 Issue:1 Volume:6 Page:140-147
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Wang Jiali¹^ORCID,Phang Sieu Pheng¹,Samundsett Christian¹,Li Zhuofeng¹,Truong Thien N.¹^ORCID,Yang Jie²,Wang Zhao²,Zheng Peiting²,Zhang Xinyu³,Nguyen Hieu T.¹^ORCID,Macdonald Daniel¹,Stuckelberger Josua¹

Affiliation:

1. School of Engineering, The Australian National University, Canberra, ACT 2600, Australia

2. Zhejiang Jinko Solar Co., Ltd, Jiaxing, Zhejiang 314416, China

3. Jinko Solar Co., Ltd, Shangrao, Jiangxi 334100, China

Funder

Australian Centre for Advanced Photovoltaics

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c04148

Reference47 articles.

1. International Energy Agency (IEA), Solar PV, September 2022. https://www.iea.org/reports/solar-pv (accessed November 2022).

2. International Technology Roadmap for Photovoltaic (ITRPV) 2021 Results, 13th edition, March 2022. https://itrpv.vdma.org/ (accessed November 2022).

3. SiO2 surface passivation layers – a key technology for silicon solar cells

4. Tunnel oxide passivating electron contacts as full-area rear emitter of high-efficiency p-type silicon solar cells

5. Tunnel oxide passivated contacts as an alternative to partial rear contacts

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