Theoretical Investigation of the Low- and High-Temperature MOVPE of Zinc Selenide

Author:

Cavallotti Carlo1,Moscatelli Davide1,Carrà Sergio1

Affiliation:

1. Department di Chimica, Materiali e Ingegneria Chimica “G. Natta”, Politecnico di Milano, Via Mancinelli 7 − 20131 Milano, Italy

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Reference36 articles.

1. CVD of Compound Semiconductors

2. Prete, P.; Lovergine, N.; Traversa, M.; Mancini, A. M.IC MOVPE XI; Berlin, 2002; p 147.

3. Joint Venture to Produce ZnSe-based White LEDs. InCompound Semiconductor; IOP, Ltd.  Bristol, U.K., Jan-Feb 2003; p 5.

4. First-principles study of Zn- and Se-stabilized ZnSe(100) surface reconstructions

5. Recent developments in the MOVPE growth of low H content ZnSe-based compounds and heterostructures

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