Role of Surface Reduction in the Formation of Traps in n-Doped II–VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface-Reference-Cited by-同舟云学术

Role of Surface Reduction in the Formation of Traps in n-Doped II–VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface

Author:

du Fossé Indy¹^ORCID,ten Brinck Stephanie²,Infante Ivan²³^ORCID,Houtepen Arjan J.¹^ORCID

Affiliation:

1. Optoelectronic Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands

2. Department of Theoretical Chemistry, Faculty of Science, Vrije Universiteit Amsterdam, de Boelelaan 1083, 1081 HV Amsterdam, The Netherlands

3. Department of Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy

Funder

H2020 European Research Council

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

Reference64 articles.

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