Efficient Selenium Photodiodes Based on an Inverted P-i-N Structure-Reference-Cited by-同舟云学术

Efficient Selenium Photodiodes Based on an Inverted P-i-N Structure

Published:2024-05-21 Issue:11 Volume:36 Page:5846-5854
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Li Ruiming¹,Chen Xin¹,Bai Songxue¹,Xu Wenxiong²,Xia Chuansheng²,Zhang Bo³,Jia Zhenglin¹,Liu Yong¹^ORCID,Liu Hailin¹,Tian Xiaoyu³^ORCID,Cui Qiannan²^ORCID,Lin Qianqian¹^ORCID

Affiliation:

1. Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan 430072, China

2. School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China

3. School of Mechanical Engineering, Wuhan Polytechnic University, Wuhan 430072, China

Funder

Wuhan Municipal Science and Technology Bureau

National Natural Science Foundation of China

Hubei Luojia Laboratory

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.4c01284

Reference48 articles.

1. X-ray photoemission study of a new allotrope of solid selenium (rhombohedral Se consisting ofSe6ring molecules)

2. Impact of point defects on the electrical properties of selenium: A density functional theory investigation with discussion of the entropic term

3. Optical Properties of Tellurium and Selenium

4. Hexagonal Selenium Nanowires Synthesized via Vapor-Phase Growth

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