Carrier Generation in p-Type Wide-Gap Oxide: SnNb2O6 Foordite-Reference-Cited by-同舟云学术

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Carrier Generation in p-Type Wide-Gap Oxide: SnNb2O6 Foordite

Published:2018-11-06 Issue:22 Volume:30 Page:8221-8225
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Samizo Akane¹²,Kikuchi Naoto¹^ORCID,Aiura Yoshihiro¹^ORCID,Nishio Keishi²,Mibu Ko³

Affiliation:

1. Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan

2. Department of Materials Science and Technology, Tokyo University of Science, Katsushika 125-8585, Japan

3. Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.8b03408

Reference22 articles.

1. Transparent p-Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions

2. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

3. Recent progress in transparent oxide semiconductors: Materials and device application

4. Identification and design principles of low hole effective mass p-type transparent conducting oxides

5. Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application

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1. Electron Trap Analysis of Tin(II) Niobate Photocatalyst Particles Using Photoacoustic Infrared Spectroscopy;The Journal of Physical Chemistry C;2023-07-07

2. Destabilization of Sn²⁺ 5s² Lone-Pair States of SnO through Dimensional Crossover;The Journal of Physical Chemistry Letters;2023-06-22

3. Control of Hole Density in Russellite Bi₂WO₆ via Intentional Chemical Doping;Inorganic Chemistry;2023-06-01

4. CeO_2−δ Nanoparticles Supported on SnNb₂O₆ Nanosheets for Selective Catalytic Reduction of NO_x with NH₃;ACS Applied Nano Materials;2022-09-13

5. Toward the Development of High‐Performancep‐Channel Oxide‐TFTs and All‐Oxide Complementary Circuits;Amorphous Oxide Semiconductors;2022-05-20

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