Enhanced Heterojunction Interface Quality To Achieve 9.3% Efficient Cd-Free Cu2ZnSnS4 Solar Cells Using Atomic Layer Deposition ZnSnO Buffer Layer-Reference-Cited by-同舟云学术

Enhanced Heterojunction Interface Quality To Achieve 9.3% Efficient Cd-Free Cu2ZnSnS4 Solar Cells Using Atomic Layer Deposition ZnSnO Buffer Layer

Published:2018-10-20 Issue:21 Volume:30 Page:7860-7871
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Cui Xin¹^ORCID,Sun Kaiwen¹^ORCID,Huang Jialiang¹,Lee Chang-Yeh¹,Yan Chang¹,Sun Heng¹,Zhang Yuanfang¹,Liu Fangyang¹^ORCID,Hossain Md. Anower²,Zakaria Yahya²,Wong Lydia Helena³^ORCID,Green Martin¹^ORCID,Hoex Bram¹,Hao Xiaojing¹^ORCID

Affiliation:

1. Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, UNSW Sydney, Sydney, New South Wales 2052, Australia

2. Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, Qatar Foundation, Education City, Doha 34110, Qatar

3. School of Material Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore

Funder

Australian Research Council

Australian Renewable Energy Agency

Baosteel-Australia Joint Research and Development Centre

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.8b03398