Toward Nonepitaxial Laser Diodes

Author:

Gunnarsson William B.1,Roh Kwangdong2ORCID,Zhao Lianfeng3ORCID,Murphy John P.4ORCID,Grede Alex J.4,Giebink Noel C.4ORCID,Rand Barry P.15ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States

2. Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea

3. Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29634, United States

4. Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

5. Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544, United States

Funder

Defense Advanced Research Projects Agency

National Science Foundation

Eric and Wendy Schmidt Transformative Technology Fund

Publisher

American Chemical Society (ACS)

Subject

General Chemistry

Reference321 articles.

1. Coherent Light Emission From GaAs Junctions

2. STIMULATED EMISSION OF RADIATION FROM GaAsp‐nJUNCTIONS

3. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS

4. SEMICONDUCTOR MASER OF GaAs

5. Coldren, L. A.; Corzine, S. W.Diode Lasers and Photonic Integrated Circuits; John Wiley and Sons Inc: New York, 1995; pp 1–184.

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