Nonequilibrium Rock-Salt-Type Pb-Doped SnSe with High Carrier Mobilities ≈ 300 cm2/(Vs)-Reference-Cited by-同舟云学术

Nonequilibrium Rock-Salt-Type Pb-Doped SnSe with High Carrier Mobilities ≈ 300 cm2/(Vs)

Published:2016-03-29 Issue:7 Volume:28 Page:2278-2286
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Inoue Takeshi¹,Hiramatsu Hidenori¹²,Hosono Hideo¹²,Kamiya Toshio¹²

Affiliation:

1. Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

2. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Tokyo Institute of Technology Foundation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.6b00307

Reference27 articles.

1. The preparation and the electrical and optical properties of SnS crystals

2. Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductors

3. Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS

4. Growth of high-quality SnS epitaxial films by H2S flow pulsed laser deposition

5. n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route

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