Hard X-ray Photon-in Photon-out Spectroscopy as a Probe of the Temperature-Induced Delocalization of Electrons in Nanoscale Semiconductors-Reference-Cited by-同舟云学术

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Hard X-ray Photon-in Photon-out Spectroscopy as a Probe of the Temperature-Induced Delocalization of Electrons in Nanoscale Semiconductors

Published:2017-02-12 Issue:4 Volume:29 Page:1461-1466
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Hirsch Ofer¹,Kvashnina Kristina²³,Willa Christoph¹,Koziej Dorota¹^ORCID

Affiliation:

1. Laboratory for Multifunctional Materials, Department of Materials, ETH Zürich, Vladimir-Prelog-Weg 5, 8093 Zurich, Switzerland

2. The European Synchrotron Research Facility, CS40220, 38043 Grenoble Cedex 9, France

3. Institute of Resource Ecology, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany

Funder

Eidgen?ssische Technische Hochschule Z?rich

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.6b05218

Reference33 articles.

1. Complex thermoelectric materials

2. Identification of Highly Active Fe Sites in (Ni,Fe)OOH for Electrocatalytic Water Splitting

3. Nanomaterials in transistors: From high-performance to thin-film applications

4. Electronics based on two-dimensional materials

5. Mobility engineering and a metal–insulator transition in monolayer MoS2

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