Engineering Valence Band Dispersion for High Mobility p-Type Semiconductors-Reference-Cited by-同舟云学术

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Engineering Valence Band Dispersion for High Mobility p-Type Semiconductors

Published:2016-10-25 Issue:6 Volume:29 Page:2402-2413
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Williamson Benjamin A. D.¹,Buckeridge John¹,Brown Jennilee¹²,Ansbro Simon¹²,Palgrave Robert G.¹²,Scanlon David O.¹³

Affiliation:

1. University College London, Kathleen Lonsdale Materials Chemistry, Department of Chemistry, 20 Gordon Street, London WC1H 0AJ, United Kingdom

2. University College London, Department of Chemistry, Christopher Ingold Building, London WC1H 0AJ, United Kingdom

3. Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.6b03306

Reference121 articles.

1. New Photovoltaic Devices Based on the Sensitization of p-type Semiconductors: Challenges and Opportunities

2. Tin Monoxide: Structural Prediction from First Principles Calculations with van der Waals Corrections

3. Highly sensitive and selective gas sensors using p-type oxide semiconductors: Overview

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Criteria for Choosing Transparent Conductors

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4. Enhancement of thermoelectric performance in monolayer AlP3 via Ga and In doping: A first-principles study;Materials Science in Semiconductor Processing;2024-06

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