Heteroleptic Cyclopentadienyl-Amidinate Precursors for Atomic Layer Deposition (ALD) of Y, Pr, Gd, and Dy Oxide Thin Films-Reference-Cited by-同舟云学术

Heteroleptic Cyclopentadienyl-Amidinate Precursors for Atomic Layer Deposition (ALD) of Y, Pr, Gd, and Dy Oxide Thin Films

Published:2016-07-18 Issue:15 Volume:28 Page:5440-5449
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Seppälä Sanni¹,Niinistö Jaakko¹,Blanquart Timothee¹,Kaipio Mikko¹,Mizohata Kenichiro²,Räisänen Jyrki²,Lansalot-Matras Clement³,Noh Wontae³,Ritala Mikko¹,Leskelä Markku¹

Affiliation:

1. Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland

2. Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki, Finland

3. AirLiquide Laboratories Korea, Yonsei Engineering Research Park, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea

Funder

Suomen Akatemia

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.6b01869

Reference32 articles.

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2. Rare-earth oxide thin films for gate dielectrics in microelectronics

3. Robertson, J.; Xiong, K.InRare Earth Oxide thin films: Growth, characterization and applications;Fanciulli, M.; Scarell, G., Eds.Springer–Verlag:Berlin, Heidelberg, 2007; Chapter 18, pp313–330.

4. Dimoulas, A.InRare Earth Oxide thin films: Growth, characterization and applications;Fanciulli, M.; Scarell, G., Eds.Springer–Verlag:Berlin, Heidelberg, 2007; Chapter 22, pp379–390.

5. La-based ternary rare-earth oxides as alternative high-κ dielectrics

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