Trends in the Behavior of Point Defects in MB and MAB Phases-Reference-Cited by-同舟云学术

Trends in the Behavior of Point Defects in MB and MAB Phases

Published:2022-08-29 Issue:17 Volume:34 Page:7807-7816
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Kim Jun Young¹²^ORCID,Zhang Hongliang³,Xi Jianqi¹,Szlufarska Izabela¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States

2. Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States

3. Department of Engineering Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States

Funder

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.2c01291

Reference51 articles.

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5. Jung, D. H.; Metalline of Semiconductor Device Having a Diffuson Barrier Including CrxBy and Method for Forming the Same. U.S. Patent 7875979 B2, 2011.

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