Modulation of Carrier Type in Nanocrystal-in-Matrix Composites by Interfacial Doping-Reference-Cited by-同舟云学术

Modulation of Carrier Type in Nanocrystal-in-Matrix Composites by Interfacial Doping

Published:2018-04-02 Issue:8 Volume:30 Page:2544-2549
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Sharma Richa¹,Sawvel April M.¹,Barton Bastian¹,Dong Angang¹^ORCID,Buonsanti Raffaella¹,Llordes Anna¹^ORCID,Schaible Eric²,Axnanda Stephanus²,Liu Zhi²,Urban Jeffrey J.¹^ORCID,Nordlund Dennis³,Kisielowski Christian¹,Milliron Delia J.¹⁴^ORCID

Affiliation:

1. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

2. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

3. Stanford Synchrotron Radiation Laboratory, P.O. Box 20450, Stanford, California 94309, United States

4. McKetta Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States

Funder

Welch Foundation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.7b04689

Reference36 articles.

1. Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene

2. Chalcogenidometallate Clusters as Surface Ligands for PbSe Nanocrystal Field-Effect Transistors

3. Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange

4. High-performance thermoelectric nanocomposites from nanocrystal building blocks

5. The surface plays a core role

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