Selective Hydrogen Etching Leads to 2D Bi(111) Bilayers on Bi2Se3: Large Rashba Splitting in Topological Insulator Heterostructure

Author:

Su Shu Hsuan1ORCID,Chuang Pei Yu1,Chen Sheng Wen1,Chen Hsin Yu1,Tung Yi1ORCID,Chen Wei-Chuan2,Wang Chia-Hsin2,Yang Yaw-Wen2,Huang Jung Chun Andrew134,Chang Tay-Rong1,Lin Hsin56,Jeng Horng-Tay78,Cheng Cheng-Maw29,Tsuei Ku-Ding2,Su Hai Lin10,Wu Yu Cheng10

Affiliation:

1. Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan

2. National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan

3. Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, 701, Taiwan

4. Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 106, Taiwan

5. Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore

6. Department of Physics, National University of Singapore, 2 Science Drive 3, 117546, Singapore

7. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

8. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan

9. Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan

10. School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei 230009, People’s Republic of China

Funder

Ministry of Education

National Research Foundation Singapore

National Cheng Kung University

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

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