Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses-Reference-Cited by-同舟云学术

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Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses

Published:2023-08-03 Issue:16 Volume:35 Page:6396-6404
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Liu Hao¹,Gong Huang¹²,Liu Kai¹,Ding Keyuan¹³,Chen Jintao¹,Liu Zhaoyang¹,Rao Feng¹³^ORCID

Affiliation:

1. College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China

2. College of Mathematics and Statistics, Shenzhen University, Shenzhen 518071, China

3. Shenzhen Key Laboratory of New Information Display and Storage Materials, Shenzhen University, Shenzhen 518071, China

Funder

Science and Technology Foundation of Shenzhen City

Basic and Applied Basic Research Foundation of Guangdong Province

Science, Technology and Innovation Commission of Shenzhen Municipality

National Natural Science Foundation of China

Shenzhen University

Education Department Foundation of Guangdong Province

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.3c01097

Reference47 articles.

1. 3D cross-point phase-change memory for storage-class memory

2. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

3. Phase-change materials for rewriteable data storage

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction;Advanced Materials Technologies;2024-08-06

2. Indium turns tellurium into an ovonic threshold switching selector via a stabilizing amorphous network;Journal of Materials Chemistry C;2024

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