Growth and Device Characteristics of CZTSSe Thin-Film Solar Cells with 8.03% Efficiency-Reference-Cited by-同舟云学术

Growth and Device Characteristics of CZTSSe Thin-Film Solar Cells with 8.03% Efficiency

Published:2015-07-24 Issue:15 Volume:27 Page:5180-5188
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Son Dae-Ho¹,Kim Dae-Hwan¹,Park Si-Nae¹,Yang Kee-Jeong¹,Nam Dahyun²,Cheong Hyeonsik²,Kang Jin-Kyu¹

Affiliation:

1. Convergence Research Center for Solar Energy, Daegu Gyeongbuk Institute of Science & Technology, 333 Techno jungang-daero, Hyeonpung-myeon, Dalseong-gun, Daegu 711-873, Republic of Korea

2. Department of Physics, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul 121-742, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Ministry of Education, Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.5b01181

Reference29 articles.

1. Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4absorber

2. Co-evaporated Cu2ZnSnSe4 films and devices

3. Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency

4. Studies on Cu2ZnSnS4 (CZTS) absorber layer using different stacking orders in precursor thin films

5. Cu2ZnSnSe4thin film solar cells produced by selenisation of magnetron sputtered precursors

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