Monolayer Doping of Silicon through Grafting a Tailored Molecular Phosphorus Precursor onto Oxide-Passivated Silicon Surfaces-Reference-Cited by-同舟云学术

Monolayer Doping of Silicon through Grafting a Tailored Molecular Phosphorus Precursor onto Oxide-Passivated Silicon Surfaces

Published:2016-06-03 Issue:11 Volume:28 Page:3634-3640
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Alphazan Thibault¹²³,Mathey Laurent¹²³,Schwarzwälder Martin⁴,Lin Tsung-Han⁴,Rossini Aaron J.⁵,Wischert Raphaël⁴,Enyedi Virginie¹²,Fontaine Hervé¹²,Veillerot Marc¹²,Lesage Anne⁶,Emsley Lyndon⁵,Veyre Laurent³,Martin François¹²,Thieuleux Chloé³,Copéret Christophe⁴

Affiliation:

1. Univ. Grenoble Alpes, Grenoble F-38000, France

2. CEA, LETI, MINATEC Campus, Grenoble F-38054, France

3. C2P2, CPE Lyon, 43 Bd du 11 Nov. 1918, Villeurbanne 69616 CEDEX, France

4. Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg. 1-5, Zürich CH-8093, Switzerland

5. Institut des Sciences et Ingénierie Chimiques, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne CH-1015, Switzerland

6. Centre de RMN à Très Hauts Champs, Institut de Sciences Analytiques (CNRS/ENS Lyon/UCB Lyon, Université de Lyon, Villeurbanne 69100, France

Funder

European Research Council

Centre National de la Recherche Scientifique

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Publisher