Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6-Reference-Cited by-同舟云学术

Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6

Published:2021-05-17 Issue:11 Volume:33 Page:4122-4127
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Piva Mario M.¹²³^ORCID,Rahn Marein C.¹⁴,Thomas Sean M.¹,Scott Brian L.¹,Pagliuso Pascoal G.²,Thompson Joe D.¹,Schoop Leslie M.⁵^ORCID,Ronning Filip¹,Rosa Priscila F. S.¹

Affiliation:

1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States

2. Instituto de Física “Gleb Wataghin”, UNICAMP, 13083-859 Campinas, São Paulo, Brazil

3. Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, D-01187 Dresden, Germany

4. Institute for Solid State and Materials Physics, Technical University of Dresden, 01062 Dresden, Germany

5. Department of Chemistry, Princeton University, Princeton, New Jersey 08544, United States

Funder

Deutsche Forschungsgemeinschaft

Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico

Funda??o de Amparo ? Pesquisa do Estado de S?o Paulo

Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior

Wurzburg-Dresden Cluster of Excellence

U.S. Department of Energy, O?ce of Basic Energy Sciences, Division of Materials Science and Engineering

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.1c00797

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