Atomic Layer Deposition of Iridium Using a Tricarbonyl Cyclopropenyl Precursor and Oxygen-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Iridium Using a Tricarbonyl Cyclopropenyl Precursor and Oxygen

Published:2022-02-09 Issue:4 Volume:34 Page:1533-1543
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Park Na-Yeon¹,Kim Minsu²^ORCID,Kim Youn-Hye¹,Ramesh Rahul¹,Nandi Dip K.¹,Tsugawa Tomohiro³,Shigetomi Toshiyuki³,Suzuki Kazuharu³,Harada Ryosuke³,Kim Miso⁴,An Ki-Seok²^ORCID,Shong Bonggeun⁴^ORCID,Kim Soo-Hyun¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Yeungnam University, 214-1, Dae-dong, Gyeongsan, Gyeongsangbuk-do 38541, Republic of Korea

2. Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea

3. Chemical Materials Development Department, TANAKA Precious Metals, 22, Wadai, Tsukuba, Ibaraki 300-4247, Japan

4. Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea

Funder

National Research Foundation of Korea

Korea Basic Science Institute

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.1c03142

Reference82 articles.

1. Development of antiferromagnetic Heusler alloys for the replacement of iridium as a critically raw material

2. Electrochemical characteristics of iridium coating by double glow plasma discharge process on titanium alloy substrates

3. Metal Oxide Semiconductor Field Effect Transistor Characteristics with Iridium Gate Electrode on Atomic Layer Deposited ZrO2High-kDielectrics

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