Achieving Ultrahigh Photocurrent Density of Mg/Mn-Modified KNbO3 Ferroelectric Semiconductors by Bandgap Engineering and Polarization Maintenance

Author:

Lan Yuchen1,Tang Wenbin1,Yuan Changlai12ORCID,Xiong Jian1ORCID,Xue Xiaogang1ORCID,Chen Jun2ORCID,Miao Lei13ORCID,Zhao Jingtai1,Rao Guang-Hui1,Guo Yiping4ORCID,Zhou Changrong1,Peng Biaolin5

Affiliation:

1. Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China

2. School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China

3. Department of Materials Science and Engineering, SIT Research Laboratories, Innovative Global Program, Faculty of Engineering, Shibaura Institute of Technology, Tokyo 1358548, Japan

4. State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

5. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710126, China

Funder

Natural Science Foundation of Guangxi Province

National Natural Science Foundation of China

Foundation for Guangxi Bagui scholars

Guangxi Key Laboratory of Information Materials

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

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