Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz
Author:
Affiliation:
1. Solid State Physics, Lund University, Box 118, 221 00 Lund, Sweden
2. Qumat Technologies AB, 222 24 Lund, Sweden
3. Electrical and Information Technology, Lund University, Box 118, 221 00 Lund, Sweden
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl903125m
Reference17 articles.
1. High performance fully-depleted tri-gate CMOS transistors
2. Vertical Silicon-Nanowire Formation and Gate-All-Around MOSFET
3. Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate
4. High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes
5. Ultrahigh Frequency Carbon Nanotube Transistor Based on a Single Nanotube
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