Molecular Electrostatic Field as a Reactivity Map for the Si(111) Surface-Reference-Cited by-同舟云学术

Molecular Electrostatic Field as a Reactivity Map for the Si(111) Surface

Published:1996-01-01 Issue:20 Volume:100 Page:8462-8467
ISSN:0022-3654
Container-title:The Journal of Physical Chemistry
language:en
Short-container-title:J. Phys. Chem.

Author:

Kádas Krisztina¹,Kugler Sándor¹,Náray-Szabó Gábor¹

Affiliation:

1. Department of Theoretical Physics, Institute of Physics, Technical University of Budapest, H-1521 Budapest, Budafoki út 8, Hungary and Department of Theoretical Chemistry, Eötvös Loránd University, H-1117 Budapest, Pázmány Péter st. 2, Hungary

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry,General Engineering

Link

https://pubs.acs.org/doi/pdf/10.1021/jp960004j

Reference31 articles.

1. Low‐energy electron diffraction analysis of the Si(111)7×7 structure

2. Atom-resolved surface chemistry studied by scanning tunneling microscopy and spectroscopy

3. Probing and inducing surface chemistry with the STM: the reactions of Si(111)-7 × 7 with H2O and O2

4. Acetylene adsorption on Si(111)(7×7): A scanning-tunneling-microscopy study

5. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

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