Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy-Reference-Cited by-同舟云学术

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Published:2016-12-12 Issue:50 Volume:120 Page:9907-9915
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Nagaoka Shin-ichi¹^ORCID,Kakiuchi Takuhiro¹,Ohshita Joji,Takahashi Osamu,Hikosaka Yasumasa²

Affiliation:

1. Department of Chemistry, Faculty of Science and Graduate School of Science and Engineering, Ehime University, Matsuyama 790-8577, Japan

2. Graduate School of Medicine and Pharmaceutical Sciences, University of Toyama, Toyama 930-0194, Japan

Funder

Japan Society for the Promotion of Science

Shimadzu Science Foundation

Daiko Foundation

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpca.6b09399

Reference37 articles.

1. Atomic position dependence of the primary core electron excitation on site-specific chemical bond scission

2. A Study To Control Chemical Reactions Using Si:2p Core Ionization: Site-Specific Fragmentation

3. Photoelectron and Auger Spectroscopy

4. International Technology Roadmap for Semiconductors Home Page.http://www.itrs2.net/(accessed December 10, 2016) .

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