Migrations of Pentagon–Heptagon Defects in Hexagonal Boron Nitride Monolayer: The First-Principles Study
Author:
Affiliation:
1. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Funder
Ministry of Science and Technology of the People's Republic of China
Tsinghua University
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpca.5b01308
Reference62 articles.
1. Boron Nitride Nanotubes and Nanosheets
2. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
3. Electronic structure of defects in a boron nitride monolayer
4. Dislocations and Grain Boundaries in Two-Dimensional Boron Nitride
5. Electronic and Magnetic Properties of Hybrid Boron Nitride Nanoribbons and Sheets with 5–7 Line Defects
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