Electronic Structure and Thermochemical Parameters of the Silicon-Doped Boron Clusters BnSi, with n = 8–14, and Their Anions
Author:
Affiliation:
1. Department of Chemistry, KU Leuven, Celestijnenlaan 200F, B-3001 Leuven, Belgium
2. Institute for Computational Science and Technology (ICST), Quang Trung Software City, Ho Chi Minh City, Viet Nam
Funder
Fonds Wetenschappelijk Onderzoek
Onderzoeksraad, KU Leuven
B? Giáo d?c và Ðào t?o
Department of Science and Technology of Ho Chi Minh City
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpca.6b00847
Reference70 articles.
1. Towards novel boron nanostructural materials
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5. Electronic structure and photoelectron spectra of Bnwith n = 26–29: an overview of structural characteristics and growth mechanism of boron clusters
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