Infrared Spectroscopy of Disilicon-Carbide, Si2C: The ν3 Fundamental Band-Reference-Cited by-同舟云学术

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Infrared Spectroscopy of Disilicon-Carbide, Si2C: The ν3 Fundamental Band

Published:2019-04-22 Issue:19 Volume:123 Page:4168-4177
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Witsch Daniel¹^ORCID,Lutter Volker¹,Breier Alexander A.¹,Yamada Koichi M. T.²,Fuchs Guido W.¹,Gauss Jürgen³,Giesen Thomas F.¹

Affiliation:

1. Institute of Physics, University of Kassel, Heinrich-Plett Str. 40, 34132 Kassel, Germany

2. AIST, Tsukuba-West, Onogawa 16-1, 305-8569 Tsukuba, Japan

3. Institut für Physikalische Chemie, Johannes Gutenberg-Universität Mainz, Duesbergweg 10-14, 55128 Mainz, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpca.9b01605

Reference63 articles.

1. Nucleation of Small Silicon Carbide Dust Clusters in AGB Stars

2. Silicon carbide and the origin of interstellar carbon grains

3. DENSITY-ENHANCED GAS AND DUST SHELLS IN A NEW CHEMICAL MODEL FOR IRC+10216

4. Astonomical and laboratory detection of the SiC radical

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1. Mid-infrared dual-comb spectroscopy with quantum cascade lasers;APL Photonics;2024-03-01

2. Rotational relaxation of SiCSi by collision with para-H$$_2(j=0)$$;The European Physical Journal D;2023-06

3. Ro-vibrational Spectrum of Linear Dialuminum Monoxide (Al₂O) at 10 μm;The Journal of Physical Chemistry A;2023-04-25

4. Reaction dynamics of C(3P) + Si2(X $^{3}\Sigma ^-_g$ ) → Si(3P) + SiC(X 3Π) on a global CHIPR potential energy surface of the ground state Si2C(X 1A1);Monthly Notices of the Royal Astronomical Society;2023-04-17

5. An explicitly correlated six-dimensional potential energy surface for the SiCSi + H₂ complex;Physical Chemistry Chemical Physics;2023

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