Bias-Stress Effect in 1,2-Ethanedithiol-Treated PbS Quantum Dot Field-Effect Transistors-Reference-Cited by-同舟云学术

Bias-Stress Effect in 1,2-Ethanedithiol-Treated PbS Quantum Dot Field-Effect Transistors

Published:2012-04-05 Issue:4 Volume:6 Page:3121-3127
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Osedach Timothy P.¹²,Zhao Ni³,Andrew Trisha L.¹,Brown Patrick R.,Wanger Darcy D.⁴,Strasfeld David B.⁴,Chang Liang-Yi,Bawendi Moungi G.⁴,Bulović Vladimir¹

Affiliation:

1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

2. School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States

3. Department of Electronic Engineering, Chinese University of Hong Kong, Hong Kong SAR, China

4. Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn3008788

Reference41 articles.

1. Charge transport in PbSe nanocrystal arrays

2. p-Type PbSe and PbS Quantum Dot Solids Prepared with Short-Chain Acids and Diacids

3. Dependence of Carrier Mobility on Nanocrystal Size and Ligand Length in PbSe Nanocrystal Solids

4. Structural, Optical, and Electrical Properties of PbSe Nanocrystal Solids Treated Thermally or with Simple Amines

5. Structural, Optical, and Electrical Properties of Self-Assembled Films of PbSe Nanocrystals Treated with 1,2-Ethanedithiol

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