Minority Carrier Accumulation and Interfacial Kinetics in Nanosized Pt-Dotted Silicon Electrolyte Interfaces Studied by Microwave Techniques-Reference-Cited by-同舟云学术

Minority Carrier Accumulation and Interfacial Kinetics in Nanosized Pt-Dotted Silicon Electrolyte Interfaces Studied by Microwave Techniques

Published:2002-10-16 Issue:44 Volume:106 Page:11526-11530
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Wünsch F.¹,Nakato Y.¹,Tributsch H.¹

Affiliation:

1. Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany, and Department of Chemistry, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp021016%2B

Reference15 articles.

1. Microwave photoconductivity scanning microscope studies of silicon surfaces

2. Microwave photoelectrochemistry

3. Deconvolution of the Impedance of the Silicon/Electrolyte Interface by Potential‐Modulated‐Microwave Measurements

4. Effect of microscopic discontinuity of metal overlayers on the photovoltages in metal-coated semiconductor-liquid junction photoelectrochemical cells for efficient solar energy conversion

5. Novel approach to efficient photoelectrochemical solar cells using electrolyte/discontinuous metal/semiconductor junctions

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