Electronic and Quantum Transport Properties of Atomically Identified Si Point Defects in Graphene-Reference-Cited by-同舟云学术

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Electronic and Quantum Transport Properties of Atomically Identified Si Point Defects in Graphene

Published:2014-05-02 Issue:10 Volume:5 Page:1711-1718
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Lopez-Bezanilla Alejandro¹,Zhou Wu²,Idrobo Juan-Carlos³

Affiliation:

1. Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois 60439, United States

2. Materials Science and Technology Division, Oak Ridge National Laboratory, One Bethel Valley Road, Oak Ridge, Tennessee 37831, United States

3. Center for Nanophase Materials Sciences Division, Oak Ridge National Laboratory, One Bethel Valley Road, Oak Ridge, Tennessee 37831, United States

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jz500403h

Reference27 articles.

1. Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering

2. Energy Band-Gap Engineering of Graphene Nanoribbons

3. Hydrocarbon lithography on graphene membranes

4. Hydrogenation of Ferrimagnetic Graphene on a Co Surface: Significant Enhancement of Spin Moments by C–H Functionality

5. Mobility Gap and Anomalous Dispersion

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